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FMM150-0075P Datasheet

  • FMM150-0075P

  • Trench Power MOSFET Phaseleg Topology in ISOPLUS i4-PAC

  • 45.50KB

  • 2頁

  • IXYS   IXYS

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FMM 150-0075P
Trench Power MOSFET
Phaseleg Topology
in ISOPLUS i4-PAC
TM
I
D25
= 150 A
= 75 V
V
DSS
R
DSon typ.
= 4.7 m鈩?/div>
鈩?/div>
Preliminary data
3
T1
5
4
1
2
T2
1
5
MOSFET T1/T2
Symbol
V
DSS
V
GS
I
D25
I
D90
I
F25
I
F90
T
C
= 25擄C
T
C
= 90擄C
(body diode) T
C
= 25擄C
(body diode) T
C
= 90擄C
Conditions
T
VJ
= 25擄C to T
VJmax
Maximum Ratings
75
鹵20
150
120
150
100
V
V
A
A
A
A
Features
鈥?/div>
trench MOSFET
- very low on state resistance R
DSon
-
fast switching
鈥?ISOPLUS i4-PAC
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered E 72873
Applications
鈥?automotive
- AC drives - starter generator for 42V
etc.
- choppers - replacing series resistors
for DC drives, heating etc.
- DC-DC converters - between 12V
and 42V system etc.
- electronic switches -replacing relays
and fuses
鈥?power supplies
- DC-DC converters
- solar inverters
鈥?battery supplied systems
- choppers or inverters for drives in
hand held tools
- battery chargers
Symbol
Conditions
(T
VJ
Characteristic Values
= 25擄C, unless otherwise specified)
min.
typ. max.
4.7
2
0.1
6.2 m鈩?/div>
4
V
R
DSon
V
GSth
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
F
t
rr
R
thJC
R
thJH
V
GS
= 10 V; I
D
= I
D90
V
DS
= 20 V; I
D
= 1 mA
V
DS
= 75 V; V
GS
= 0 V; T
VJ
= 25擄C
T
VJ
= 125擄C
V
GS
= 鹵20 V; V
DS
= 0 V
V
GS
= 10 V; V
DS
= 60 V; I
D
= 50 A
10 碌A(chǔ)
mA
200 nA
225
30
85
60
165
320
195
1.1
90
1.0
1.5
nC
nC
nC
ns
ns
ns
ns
V
ns
0.6 K/W
K/W
V
GS
= 10 V; V
DS
= 30 V
I
D
= 25 A; R
G
= 10
鈩?/div>
(body diode) I
F
= 75 A; V
GS
= 0 V
(body diode) I
F
= 20A; -di/dt = 100A/碌s; V
DS
= 30V
with heat transfer paste
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2004 IXYS All rights reserved
1-2
419

FMM150-0075P 產(chǎn)品屬性

  • 24

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 陣列

  • -

  • 2 個(gè) N 溝道（雙）

  • 標(biāo)準(zhǔn)型

  • 75V

  • 150A

  • 4.2 毫歐 @ 120A，10V

  • 4V @ 1mA

  • 225nC @ 10V

  • -

  • -

  • 通孔

  • i4-Pac?-5

  • ISOPLUS i4-PAC?

  • 管件

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