EMG8 / UMG8N / FMG8A
Transistors
Emitter common
(dual digital transistors)
EMG8 / UMG8N / FMG8A
Features
1) Two DTC143Z chips in a EMT or UMT or SMT
package.
2) Mounting cost and area can be cut in half.
External dimensions
(Unit : mm)
EMG8
(3)
(2)
(5)
0.22
(4)
0.13
1.2
1.6
(1)
Structure
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
Each lead has same dimensions
ROHM : EMT5
Abbreviated symbol : G8
UMG8N
(4)
(3)
The following characteristics apply to both the DTr
1
and
DTr
2
.
0.65 0.65
0.5
1.3
0.5 0.5
1.0
1.6
0.2
(5)
1.25
2.1
0.15
0.7
0.9
Equivalent circuit
EMG8 / UMG8N
(3)
R
1
DTr
2
(4)
R
2
0.1Min.
0to0.1
FMG8A
(1)
R
1
=4.7k鈩?/div>
R
1
R
2
=47k鈩?/div>
DTr
1
(2)
R
2
(3)
R
1
DTr
2
(2)
R
2
(4)
R
2
(5)
R
1
=4.7k鈩?/div>
R
1
R
2
=47k鈩?/div>
DTr
1
(1)
ROHM : UMT5
EIAJ : SC-88A
Abbreviated symbol : G8
FMG8A
0.95 0.95
1.9
0.3
(2)
(3)
(5)
(1)
Each lead has same dimensions
(1)
1.6
2.8
0.15
(5)
(4)
0.3to0.6
Parameter
Supply voltage
Input voltage
Symbol
V
CC
V
IN
I
O
I
C (Max.)
Pd
Tj
Tstg
Limits
50
30
鈭?
100
100
150 (TOTAL)
300 (TOTAL)
150
鈭?5
to
+150
Unit
V
V
ROHM : SMT5
EIAJ : SC-74A
0to0.1
Absolute maximum ratings
(Ta = 25擄C)
Each lead has same dimensions
Abbreviated symbol : G8
Output current
EMG8, UMG8N
Power
dissipation FMG8A
Junction temperature
Storage temperature
mA
mW
藲C
藲C
鈭?/div>
1
鈭?/div>
2
鈭?/div>
1 120mW per element must not be exceeded.
鈭?/div>
2 200mW per element must not be exceeded.
0.8
1.1
2.9
2.0
(2)
Rev.A
1/2
FMG8A 產(chǎn)品屬性
0.1
4.7 k
表面貼裝
1.6mm
SMT
2.9 x 1.6 x 1.1mm
5
NPN
-55 °C
100 mA
80
+150 °C
共發(fā)射極、雙
2.9mm
1.1mm
FMG8A相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
Emitter common (dual digital transistors)
ROHM
-
英文版
Emitter common (dual digital transistors)
ROHM [Rohm...
-
英文版
TRANSISTOR | 100MA I(C) | TSOP
ETC
-
英文版
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual...
-
英文版
TRANSISTOR,NPNNPN,50V,0.1A,SMT5; Module Configuration:Dual; ...
Rohm
1
2
3
