100V, 20A Schottky barrier diode in TO220F package
FME-220A
sAbsolute
maximum ratings
Parameter
V
RM
I
F(AV)
I
FSM
I
2
t
Tj
Tstg
Ratings
100
20
120
72
鈥?40 to +150
鈥?40 to +150
Unit
V
A
A
A
2
s
擄C
擄C
10ms Half-cycle sinewave Single Shot
Conditions
sElectrical
characteristics
Parameter
V
F
I
R
H.I
R
Rth( j-c)
Ratings
0.85
1.0max
100max
4.0max
Unit
V
mA
mA
擄C/W
I
F
=10A
V
R
=V
RM
(Ta = 25擄C)
Conditions
Tj =150擄C
,
V
R
=V
RM
Junction-to-case
25
I
F(AV)
鈥揚
F
Characteristic
100
Tj =150潞C
t /T
=
1/6
Forward current I
F
(A)
t
T
V
F
鈥?I
F
Characteristic (Typ.)
20
Average forward current I
F(AV)
(A)
T
C
鈥揑
F(AV)
Characteristic
t /T
=
1/6
V
R
=0V
t /T
=
1/2
Forward power loss P
F
(W)
20
10
16
D.C.
15
t /T
=
1/ 3, Sinewave
1
12
t /T
=
1/ 3, Sinewave
10
t /T
=
1/2
5
D.C.
0.1
Ta=150擄C
125擄C
100擄C
60擄C
25擄C
0
0.4
0.8
1.2
1.6
8
Tj =150潞C
t
T
0
50
100
150
0.01
4
0
0
5
10
15
20
Average forward current I
F(AV)
(A)
0.001
Forward voltage V
F
(V)
0
Case temperature T
C
(擄C)
18
16
Reverse power loss P
R
(W)
V
R
鈥揚
R
Characteristic
Tj =150潞C
t
T
V
R
鈥?I
R
Characteristic (Typ.)
100
10
Reverse current I
R
(mA)
1
0.1
0.01
0.001
60擄C
125擄C
100擄C
Average forward current I
F(AV)
(A)
Ta=150擄C
20
T
C
鈥揑
F(AV)
Characteristic
Sinewave
V
R
=100V
1鈥?t /T=1/2
1鈥搕 /T=1/3
14
12
10
8
6
4
2
0
0
1鈥?t /T
=
5/6
1鈥?t /T
=
2/3
1鈥?t /T
=
1/2
16
12
1鈥搕 /T=1/6
8
Tj =150潞C
t
T
0
50
100
D.C.
25擄C
4
Sinewave
20
40
60
80
100
0.0001
0
20
40
60
80
100
Reverse voltage V
R
(V)
0
150
Reverse voltage V
R
(V)
Case temperature T
C
(擄C)
External dimensions
(Unit: mm)
Flammability:
UL94V-0 or equivalent
3.3
4.4 4.0
10.0
4.2
2.8
C0.5
Reference data
V
F
Distribution
(I
F
=10A)
0.80
0.79
I
R
(碌A(chǔ))
V
F
(V)
0.78
0.77
0.76
2.4
I
R
Distribution
(V
R
=100V, Ta=25擄C)
50
45
40
35
30
25
20
15
10
5
0
10
20 30
N (pcs)
40
50
40
39
38
37
36
35
34
33
32
31
30
I
R
Distribution
(V
R
=100V, Ta=150擄C)
16.9
0.8
13.5
鹵0.5
3.9
1.35
0.85
2.54
2.54
0.45
鈥?.1
+0.2
0.75
0
10
20
30
N (pcs)
40
50
I
R
(mA)
0
10
20 30
N (pcs)
40
50
1
