Ultra-Fast-Recovery Rectifier Diodes
Absolute Maximum Ratings
Parameter
Type No.
V
RM
(V)
I
F(AV)
(A)
With
Heatsink
Electrical Characteristics ( Ta =25擄C)
Tstg
(擄C)
V
F
(V)
max per
chip
Others
I
FSM
(A)
50Hz
Half-cycle Sinewave
Single Shot
Tj
(擄C)
I
F
(A)
I
R
(碌A(chǔ))
V
R
=V
RM
max
I
R
(H)
(mA)
V
R
=V
RM
Tj =150擄C max
t
rr
聦
(ns)
I
F
/
I
RP
(mA)
t
rr
聧
(ns)
I
F
/
I
RP
(mA)
Rth( j- )
(擄C/ W)
Mass
Fig.
(g)
FMC-G28S
800
3.0
5.0
50
鈥?0 to +150
60
3.0
3.0
5.0
100
200
1.0
70 500/500
2.0
35
500/1000
4.0
2.1
A
FMC-G28SL
FMC-G28S
I
F(AV)
鈥?P
F
Characteristics
12
t /T=1/6
t
T
T
C
鈥?I
F(AV)
Characteristics
3
I
FSM
(A)
Average Forward Current I
F(AV)
(A)
I
FSM
Rating
50
I
FSM
(A)
Forward Power Dissipation P
F
(W)
Tj
=150擄C
D.C.
40
20ms
8
t /T=1/3, Sinewave
2
t /T=1/3, Sinewave
t /T=1/2
1
Peak Forward Surge Current
t /T=1/6
30
20
4
D.C.
t /T=1/2
0
0
1
2
Average Forward Current I
F(AV)
(A)
3
10
0
100
0
110
120
130
140
Case Temperature Tc (擄C)
150
1
5
10
Overcurrent Cycles
50
FMC-G28SL
I
F(AV)
鈥?P
F
Characteristics
20
Average Forward Current I
F(AV)
(A)
T
C
鈥?I
F(AV)
Characteristics
5
60
50
40
30
20
10
0
I
FSM
Rating
FSM
(A)
I
FSM
(A)
Forward Power Dissipation P
F
(W)
Tj
=150擄C
t /T=1/2
3
Sinewave
10
t /T=1/6
2
t /T=1/3
5
D.C.
t /T=1/2
1
0
50
0
0
1
2
3
4
Average Forward Current I
F(AV)
(A)
5
Peak Forward Surge Current
15
t
T
t /T=1/3, Sinewave
4
t /T=1/6
20ms
D.C.
70
90
110
130
Case Temperature Tc (擄C)
150
1
5
10
Overcurrent Cycles
50
External Dimensions
(Unit: mm) (Full-mold)
Flammability:
UL94V-0 or Equivalent
Fig.
A
10.0
3.3
4.0
8.4
4.2
2.8
3.9
0.8
2.2
16.9
2.6
1.35
0.85
5.08
(13.5)
0.45
3
1
