FORMOSA
MICROSEMI CO., LTD.
Formosa MS
Spec. No. : FMSC003
Issued Date : 2002/12/25
Revised Date :
Page No. : 1/3
FMBT3904
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The FMBT3904 is designed for general purpose switching amplifier
applications.
Absolute Maximum Ratings
SOT-23
?
Maximum Temperatures
Storage Temperature ....................................................................................................... -65 ~ +150
?
C
Junction Temperature ................................................................................................................ +150
?
C
?
Maximum Power Dissipation
Total Power Dissipation (Ta=25
?
C)......................................................................................... 225 mW
?
Maximum Voltages and Currents (Ta=25
?
C)
VCBO Collector to Base Voltage .................................................................................................... 60 V
VCEO Collector to Emitter Voltage ................................................................................................ 40 V
VEBO Emitter to Base Voltage ......................................................................................................... 6 V
IC Collector Current .................................................................................................................... 200 mA
Characteristics
(Ta=25?C)
Symbol
BVCBO
BVCEO
BVEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
60
40
6
-
-
-
650
-
40
70
100
60
30
300
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
200
300
850
950
-
-
300
-
-
-
4
Unit
V
V
V
nA
mV
mV
mV
mV
Test Conditions
IC=10uA
IC=1mA
IC=10uA
VCE=30V, VBE=-3V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
VCE=20V, IC=10mA, f=100MHz
VCB=5V, f=1MHz
*Pulse Test: Pulse Width
?380us,
Duty Cycle? 2%
MHz
pF
FMBT3904
FORMOSA MS Product Specification
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