音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

FMBSA56 Datasheet

  • FMBSA56

  • PNP General Purpose Amplifier

  • 5頁

  • FAIRCHILD

掃碼查看芯片數(shù)據(jù)手冊

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

FMBSA56
FMBSA56
PNP General Purpose Amplifier
鈥?This device is designed for general purpose amplifier applications at
collector currents to 300 mA.
鈥?Sourced from Process 73.
C1
E
NC
B
C
pin #1 C
SuperSOT
TM
-6 single
Mark: .2G1
Absolute Maximum Ratings*
T
a
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
-80
-80
-4.0
-500
- 55 ~ 150
Units
V
V
V
mA
擄C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEO
I
CBO
h
FE
V
CE(sat)
V
BE(on)
f
T
Parameter
Test Condition
I
C
= -1.0mA, I
B
= 0
I
C
= -100碌A(chǔ), I
E
= 0
I
E
= -100碌A(chǔ), I
C
= 0
V
CE
= -60V, I
B
= 0
V
CB
= -80V, I
E
= 0
I
C
= -10mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
I
C
= -100mA, I
B
= -10mA
I
C
= -100mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -2.0V,
f = 100MHz
50
100
100
-0.25
-1.2
V
V
MHz
Min.
-80
-80
-4.0
-0.1
-0.1
V
碌A(chǔ)
碌A(chǔ)
Max.
Units
V
Collector-Emitter Sustaining Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
On Characteristics
Small Signal Characteristics
* Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2.0%
Thermal Characteristics
T
a
=25擄C unless otherwise noted
Symbol
P
D
R
胃JA
Parameter
Total Device Dissipation *
Thermal Resistance, Junction to Ambient, total
Max.
700
180
Units
mW
擄C/W
* Device mounted on a 1 in 2 pad of 2 oz copper.
漏2004 Fairchild Semiconductor Corporation
Rev. A1, November 2004

FMBSA56 產(chǎn)品屬性

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • PNP

  • 500mA

  • 80V

  • 250mV @ 10mA,100mA

  • 100nA

  • 100 @ 100mA,1V

  • 700mW

  • 50MHz

  • 表面貼裝

  • SOT-23-6 細型,TSOT-23-6

  • 6-SSOT

  • 帶卷 (TR)

FMBSA56相關(guān)型號PDF文件下載

掃碼下載APP,
一鍵連接廣大的電子世界。

在線人工客服

買家服務(wù):
賣家服務(wù):
技術(shù)客服:

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時間周一至周五
9:00-17:30

關(guān)注官方微信號,
第一時間獲取資訊。

建議反饋

聯(lián)系人:

聯(lián)系方式:

按住滑塊,拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見,您的參與是維庫提升服務(wù)的動力!意見一經(jīng)采納,將有感恩紅包奉上哦!