FMBSA06
FMBSA06
NPN General Purpose Amplifier
鈥?This device is designed for general purpose amplifier applications at
collector currents to 300 mA.
鈥?Sourced from Process 12.
C1
E
NC
B
C
pin #1 C
SuperSOT
TM
-6 single
Mark: .1G1
Absolute Maximum Ratings*
T
a
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
80
80
4.0
500
- 55 ~ 150
Units
V
V
V
mA
擄C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)EBO
I
CEO
I
CBO
h
FE
V
CE(sat)
V
BE(on)
f
T
Parameter
Test Condition
I
C
= 1.0mA, I
B
= 0
I
E
= 100碌A(chǔ), I
C
= 0
V
CE
= 60V, I
B
= 0
V
CB
= 80V, I
E
= 0
I
C
= 10mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
I
C
= 100mA, I
B
= 10mA
I
C
= 10mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 2.0V, f = 100MHz
100
100
100
0.25
1.2
V
V
MHz
Min.
80
4.0
0.1
0.1
Max.
Units
V
V
碌A(chǔ)
碌A(chǔ)
Collector-Emitter Sustaining Voltage *
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
On Characteristics
Small Signal Characteristics
* Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2.0%
Thermal Characteristics
T
a
=25擄C unless otherwise noted
Symbol
P
D
R
胃JA
Parameter
Total Device Dissipation *
Thermal Resistance, Junction to Ambient, total
Max.
700
180
Units
mW
擄C/W
* Device mounted on a 1 in 2 pad of 2 oz copper.
漏2004 Fairchild Semiconductor Corporation
Rev. A1, November 2004
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