FMBS549
FMBS549
NC
C
E
Package: SuperSOT-6 single
Mark : .S1
B
C
C
Pin 1
PNP Low Saturation Transistor
ThIs device is designed with high current gain and low saturation voltage with collector currents up to
2A continous. Sourced from process PB.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J,
T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
T
A
= 25擄C unless otherwise noted
Value
30
35
5
1
2
-55 to +150
Units
V
V
V
A
A
擄C
Collector Current- Continuous
- Peak Pulse Current
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150擄C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
胃JA
T
A
= 25擄C unless otherwise noted
Characteristics
Total Device Dissipation*
Thermal Resistance, Junction to Ambient, total
*
Device mounted on a 1 in2
pad of 2 oz copper.
Max
700
180
Units
mW
擄C/W
漏
1999 Fairchild Semiconductor
fmbs549.lwp Rev A PrPB