FMBS5401
FMBS5401
PNP General Purpose Amplifier
鈥?This device is designed as a general purpose amplifier and switch for
applications requiring high voltage.
E
NC
C1
B
C
pin #1 C
SuperSOT
TM
-6 single
Mark: .4S1
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings*
T
a
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Value
-150
-160
-5.0
-600
-55 ~ 150
Units
V
V
V
mA
擄C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Notes:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
Off Characteristics
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
Parameter
Test Condition
I
C
= -1.0mA, I
B
= 0
I
C
= -100碌A(chǔ), I
E
= 0
I
E
= -10碌A(chǔ), I
C
= 0
V
CB
= -120V, I
E
= 0
V
CB
= -120V, I
E
= 0, T
a
= 100擄C
V
EB
= -3.0V, I
C
=0
I
C
= -1.0mA, V
CE
= -5.0V
I
C
= -10mA, V
CE
= -5.0V
I
C
= -50mA, V
CE
= -5.0V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, V
CE
= -10V,
f = 100MHz
V
CB
= -10V, I
E
= 0, f = 1MHz
I
C
= -250碌A(chǔ), V
CE
= -5.0V, R
S
= 1.0K鈩?/div>
f = 10Hz to 15.7KHz
100
50
60
50
Min.
-150
-160
-5.0
-50
-50
-50
Max.
Units
V
V
V
nA
碌A(chǔ)
nA
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
On Characteristics *
240
-0.2
-0.5
-1.0
-1.0
300
6.0
8.0
V
V
V
V
MHz
pF
dB
V
CE
(sat)
V
BE
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Small Signal Characterics
f
T
C
ob
N
F
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
* Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2.0%
漏2004 Fairchild Semiconductor Corporation
Rev. A, Octorber 2004
1
2
3
4
5
6
