FMBM5551 NPN General Purpose Amplifier
April 2005
FMBM5551
NPN General Purpose Amplifier
鈥?This device has matched dies
鈥?Sourced from process 16.
鈥?See MMBT5551 for characteristics
C2
E1
C1
B2
E2
pin #1 B1
Mark: .3S2
Dot denotes pin #1
SuperSOT
TM
-6
Absolute Maximum Ratings *
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
T
胃JA
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation (T
C
= 25擄C)
Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Value
160
180
6
600
0.7
150
-55 ~ 150
180
Units
V
V
V
mA
W
擄C
擄C
擄C/W
* Pd total, for both transistors. For each transistor, Pd = 350mW
Electrical Characteristics
Symbol
Off Characteristics
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE1
DIVID1
h
FE2
DIVID2
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
T
C
= 25擄C unless otherwise noted
Parameter
Conditions
I
C
= 1mA, I
B
= 0
I
C
= 100碌A(chǔ), I
E
= 0
I
C
= 10碌A(chǔ), I
C
= 0
V
CB
= 120V
V
CB
= 120V, T
a
= 100擄C
V
EB
= 4V
V
CE
= 5V, I
C
= 1mA
h
FE1
(Die1)/h
FE1
(Die2)
V
CE
= 5V, I
C
= 10mA
h
FE2
(Die1)/h
FE2
(Die2)
Min.
160
180
6
Max
Units
V
V
V
50
50
50
80
0.9
80
0.95
1.1
250
1.05
nA
碌A(chǔ)
nA
On Characteristics
Variation Ratio of h
FE1
Between Die 1 and Die 2
DC Current Gain
Variation Ratio of h
FE2
Between Die 1 and Die 2
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FMBM5551 Rev. D