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FMBM5401 PNP General Purpose Amplifier

FMBM5401

PNP General Purpose Amplifier

鈥?This device has matched dies in SuperSOT-6.

C2

E1

C1

B2

E2

pin #1 B1

SuperSOT

TM

-6

Mark: .4S2

Absolute Maximum Ratings*

Symbol

V

CEO

V

CBO

V

EBO

I

C

T

J

, T

STG

Notes:

1. These ratings are based on a maximum junction temperature of 150 degrees C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

- Continuous

Value

-150

-160

-5.0

-600

-55 ~ 150

Units

V

V

V

mA

擄C

Operating and Storage Junction Temperature Range

* These ratings are limiting values above which the serviceability of any semiconductor device may e impaired.

Electrical Characteristics

Symbol

Off Characteristics

BV

CEO

BV

CBO

BV

EBO

I

CBO

I

EBO

h

FE1

DIVID1

h

FE2

DIVID2

h

FE3

DIVID3

T

C

= 25擄C unless otherwise noted

Parameter

Collector-Emitter Breakdown Voltage *

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

Conditions

I

C

= -1.0mA, I

B

= 0

I

C

= -100碌A(chǔ), I

E

= 0

I

C

= -10碌A(chǔ), I

C

= 0

V

CB

= -120V, I

E

= 0

V

CB

= -120V, I

E

= 0, T

a

= 100擄C

V

EB

= -3.0V, I

C

= 0

V

CE

= -5V, I

C

= -1mA

h

FE1

(Die1)/h

FE1

(Die2)

V

CE

= -5V, I

C

= -10mA

h

FE2

(Die1)/h

FE2

(Die2)

V

CE

= -5V, I

C

= -50mA

h

FE3

(Die1)/h

FE3

(Die2)

Min.

-150

-160

-5.0

Max

Units

V

V

V

-50

-50

-50

nA

碌A(chǔ)

nA

On Characteristics*

DC Current Gain

Variation Ratio of h

FE1

Between Die 1 and Die 2

DC Current Gain

Variation Ratio of h

FE2

Between Die 1 and Die 2

DC Current Gain

Variation Ratio of h

FE3

Between Die 1 and Die 2

50

0.9

60

0.95

50

0.9

1.1

1.1

240

1.05

漏2005 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FMBM5401 Rev. A

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