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FMBH1G75US60 Datasheet

  • FMBH1G75US60

  • TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES...

  • 671.50KB

  • 9頁

  • ETC

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FMBH1G75US60
March 2001
IGBT
FMBH1G75US60
Molding Type Module
General Description
Fairchild鈥檚 Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
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鈥?/div>
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UL Certified No. E209204
Short circuit rated 10us @ T
C
= 100擄C, V
GE
= 15V
High speed switching
Low saturation voltage : V
CE(sat)
= 2.2 V @ I
C
= 75A
High input impedance
Fast & soft anti-parallel FWD
Package Code : 7PM-AA
E1/C2
Application
C1
E2
鈥?Buck (Step Down) Converter
G1
E1
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
T
SC
P
D
T
J
T
stg
V
iso
Mounting
Torque
T
C
= 25擄C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Curent
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminals Screw : M5
Mounting Screw : M5
@ T
C
= 25擄C
@ T
C
= 100擄C
@ T
C
= 100擄C
@ T
C
= 25擄C
@ AC 1minute
FMBH1G75US60
600
鹵
20
75
150
75
150
10
310
-40 to +150
-40 to +125
2500
2.0
2.0
Units
V
V
A
A
A
A
us
W
擄C
擄C
V
N.m
N.m
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
漏2001 Fairchild Semiconductor Corporation
FMBH1G75US60 Rev. A

FMBH1G75US60 產(chǎn)品屬性

  • Fairchild Semiconductor

  • IGBT Silicon Modules

  • Single

  • 600 V

  • 75 A

  • + 150 C

  • PM-AA

  • +/- 20 V

  • - 40 C

  • Screw

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  • 英文版
    TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES...
    ETC

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