Data Sheet
200 mW EPITAXIAL
PLANAR DIODES
Mechanical Dimensions
Pin 3
Pin 2 NC
.037
.115
.037
1
3
2
.110
.060
.016
FMBB914
Description
3
1
2
Features
n
PLANAR PROCESS
n
200 mW POWER DISSIPATION
Pin 1
.043
.004
.016
n
INDUSTRY STANDARD SOT-23
PACKAGE
n
MEETS UL SPECIFICATION 94V-0
FMBB914
Units
Volts
Volts
Maximum Ratings
Peak Reverse Voltage...V
RM
RMS Reverse Voltage...V
R(rms)
Average Forward Rectified Current...I
O
Non-Repetitive Peak Forward Surge Current...I
FSM
Power Dissipation...P
D
Operating Temperature Range...T
J
Storage Temperature Range...T
STRG
Electrical Characteristics
Maximum Forward Voltage...V
F
@ I
F
= 100 mA
Maximum DC Reverse Current...I
R
Maximum Frequency...f
Maximum Diode Capacitance...C
D
Maximum Reverse Recovery Time...t
RR
.01 uF
P
VV
= 100ns
5K Ohms
50 Ohms
R
G
= 50 Ohms
Page 10-22
@ V
R
= 70V
FMBB914
80
80
............................................. 100 ............................................... mAmps
............................................. 4.0 ...............................................
.........................................
200
..........................................
......................................... -25 to 85 ..........................................
......................................... -55 to 125 ..........................................
............................................. 1.2 ...............................................
............................................. 0.1 ...............................................
............................................. 100 ...............................................
............................................. 3.5 ...............................................
............................................. 4.0 ...............................................
Amps
mW
擄C
擄C
Volts
碌A(chǔ)mps
MHz
pF
ns
Test
Device Under Test
I
F
I
R
Output
Trr
0.1 I
R
1
