Data Sheet
200 mW EPITAXIAL
PLANAR DIODES
Mechanical Dimensions
Pin 3
Pin 2 NC
.037
.115
.037
1
3
2
.110
.060
.016
Description
3
1
2
Pin 1
.043
.004
.016
Features
n
PLANAR PROCESS
n
200 mW POWER DISSIPATION
n
INDUSTRY STANDARD SOT-23
PACKAGE
n
MEETS UL SPECIFICATION 94V-0
FMBB4148
Units
Volts
Volts
Maximum Ratings
Peak Reverse Voltage...V
RM
RMS Reverse Voltage...V
R(rms)
Average Forward Rectified Current...I
O
Non-Repetitive Peak Forward Surge Current...I
FSM
Power Dissipation...P
D
Operating Temperature Range...T
J
Storage Temperature Range...T
STRG
Electrical Characteristics
Maximum Forward Voltage...V
F
@ I
F
= 150 mA
Maximum DC Reverse Current...I
R
Maximum Frequecy...f
Maximum Diode Capacitance...C
D
Maximum Reverse Recovery Time...t
RR
.01 uF
P
VV
= 100ns
5K Ohms
50 Ohms
R
G
= 50 Ohms
@ V
R
= 75V
FMBB4148
85
75
............................................. 215 ............................................... mAmps
............................................. 4.0 ...............................................
.........................................
200
..........................................
......................................... -25 to 85 ..........................................
......................................... -65 to 150 ..........................................
............................................. 1.25 ...............................................
............................................. 1.0 ...............................................
............................................. 100 ...............................................
............................................. 2.0 ...............................................
............................................. 4.0 ...............................................
Amps
mW
擄C
擄C
Volts
碌A(chǔ)mps
MHz
pF
ns
Device Under Test
Test
I
F
I
R
Output
Trr
0.1 I
R
Page 10-23
FMBB4148
1
