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-6
Mark: .1N
NPN Multi-Chip Darlington Transistor
This device is designed for applications requiring extremely high current
gain at collector currents to 1.0 A. Sourced from Process 05.
Absolute Maximum Ratings*
Symbol
V
CES
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
T
A
= 25擄C unless otherwise noted
Parameter
Value
30
30
10
1.2
-55 to +150
Units
V
V
V
A
擄C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
胃JA
T
A
= 25擄C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Max
FMBA14
700
5.6
180
Units
mW
mW/擄C
擄C/W
漏
1998 Fairchild Semiconductor Corporation