FMBA0656
Discrete Power
&
Signal Technologies
FMBA0656
C2
E1
C1
Package: SuperSOT-6
Device Marking:
.003
Note: The "
.
" (dot) signifies Pin 1
B2
E2
B1
Transistor 1 is NPN device,
transistor 2 is PNP device.
NPN & PNP Complementary Dual Transistor
SuperSOT- 6 Surface Mount Package
This device was designed for general purpose amplifier applications at collector currents to 300mA.
Sourced from Process 33 (NPN) and Process 73 (PNP).
Absolute Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
STG
T
J
R
胃JA
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (continuous)
Power Dissipation @Ta = 25擄C*
Storage Temperature Range
Junction Temperature
T
A
= 25擄C unless otherwise noted
Value
80
80
4
500
0.7
-55 to +150
150
180
Units
V
V
V
mA
W
擄C
擄C
擄C/W
Thermal Resistance, Junction to Ambient
For each transistor, Pd = 350mW.
*
Pd total, for both transistors.
Electrical Characteristics
Symbol
BV
CEO
BV
CBO
BV
EBO
Parameter
Collector to Emitter Voltage
Collector to Base Voltage
Emitter to Base Voltage
T
A
= 25擄C unless otherwise noted
Test Conditions
Ic = 1.0 mA
Ic = 100 uA
Ie = 100 uA
Min
80
80
4
Max
Units
V
V
V
漏
1997 Fairchild Semiconductor Corporation
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