FMB5551
FMB5551
NPN General Purpose Amplifier
SuperSOT-6 Surface Mount Package
鈥?This device is designed for general purpose high voltage amplifiers
and gas discharge display driving.
鈥?Sourced from process 16.
鈥?See MMBT5551 for characteristics.
B1
C2
E1
C1
B2
E2
SuperSOT-6
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
R
胃JA
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation (T
a
=25擄C) *
Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Parameter
Value
160
180
6
600
0.7
150
- 55 ~ 150
180
Units
V
V
V
mA
W
擄C
擄C
擄C/W
* Pd total, for both transistors. For each transistor, Pd = 350mW.
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
Off Characteristics
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
Parameter
Test Condition
I
C
= 1mA
I
C
= 10碌A(chǔ)
I
E
= 10碌A(chǔ)
V
CB
= 120V
V
CB
= 120V, T = 100擄C
V
EB
= 4V
V
CE
= 5V, I
C
= 1mA
V
CE
= 5V, I
C
= 10mA
V
CE
= 5V, I
C
= 50mA
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 10V, f = 1MHz
V
CB
= 0.5V, f = 1MHz
V
CE
= 10V, I
C
= 10mA
f = 100MHz
V
CE
= 5V, I
C
= 200碌A(chǔ)
f = 1MHz, R
S
= 2k鈩? B = 200Hz
V
CE
= 10V, I
C
= 1mA
f = 1KHz
50
100
80
80
30
Min.
160
180
6
50
50
50
Typ.
Max.
Units
V
V
V
nA
碌A(chǔ)
nA
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
On Characteristics
250
0.15
0.2
1
1
TYPICAL
6
20
300
8
250
pF
pF
MHz
dB
V
V
V
CE
(sat)
V
BE
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Small Signal Characteristics
C
ob
C
ib
f
T
NF
h
FE
Output Capacitance
Input Capacitance
Current gain Bandwidth Product
Noise Figure
Small Signal Current Gain
漏2002 Fairchild Semiconductor Corporation
Rev. A, January 2002
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