FMB1020
Discrete Power
&
Signal Technologies
FMB1020
Package: SuperSOT-6
Device Marking:
.004
Note: The "
.
" (dot) signifies Pin 1
Transistor 1 is NPN device,
transistor 2 is PNP device.
NPN & PNP Complementary Dual Transistor
SuperSOT-6 Surface Mount Package
This dual complementary device was designed for use as a general purpose amplifier applications at
collector currents to 300mA. Sourced from Process 10 (NPN ) and Process 68 (PNP).
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J,
T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
T
A
= 25擄C unless otherwise noted
Value
45
60
6
500
-55 to +150
Units
V
V
V
mA
擄C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150擄C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
胃JA
T
A
= 25擄C unless otherwise noted
Characteristics
Total Device Dissipation, total
per side
Thermal Resistance, Junction to Ambient, total
Max
700
350
180
Units
mW
擄C/W
漏
1998 Fairchild Semiconductor Corporation
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