UMA9N / FMA9A
Transistors
Digital transistor
(Common Emitter Dual Transistors)
UMA9N / FMA9N
!
Features
1) Two DTA114E chips in UMT and
SMT packages.
2) Mounting cost and area can be cut
in half.
!
External dimensions
(Units : mm)
UMA9N
2.0鹵0.2
1.3鹵0.1
0.65 0.65
FMA9A
2.9鹵0.2
0.9鹵0.1
0.7
(3)
1.25鹵0.1
1.9鹵0.2
0.95 0.95
1.1 +0.2
鈭?.1
0.8鹵0.1
(5)
1.6 +0.2
鈭?.1
(2)
(3)
(1)
2.1鹵0.1
(4)
2.8鹵0.2
0~0.1
(2)
(1)
0~0.1
!
Structure
Epitaxial planar type
PNP silicon transistor
(Built-in resistor type)
(4)
(5)
+0.1
0.2
鈭?.05
0.1Min.
0.15鹵0.05
All terminals have same
dimensions.
All terminals have same
dimensions.
ROHM : UMT5
EIAJ : SC-88A
ROHM : SMT5
EIAJ : SC-74A
(3)
R
1
DTr
2
R
2
(2)
R
2
(1)
R
1
DTr
1
(5)
R
1
= 10k鈩?/div>
(3)
R
1
DTr
2
(2)
R
2
(4)
R
2
(5)
R
1
DTr
1
(1)
The following characteristics apply to
both DTr
1
and DTr
2
.
(4)
R
2
= 10k鈩?/div>
Abbreviated symbol: A10
R
1
= 10k鈩?/div>
R
2
= 10k鈩?/div>
!
Absolute maximum ratings
(Ta = 25擄C)
Parameter
Supply voltage
Input voltage
Symbol
V
CC
V
IN
I
O
Output current
Power
dissipation
UMA9N
FMA9A
Tj
Tstg
I
C (MAX.)
Pd
Limits
鈭?0
鈭?0
10
鈭?0
鈭?00
150 (TOTAL)
300 (TOTAL)
150
鈭?0~+150
擄C
擄C
Unit
V
V
mA
mW
*
1
*
2
Junction temperature
Storage temperature
*
1 120mW per element must not be exceeded.
*
2 200mW per element must not be exceeded.
!
Electrical characteristics
(Ta = 25擄C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Symbol
V
I (off)
V
I (on)
V
O (on)
I
I
I
O (off)
G
I
f
T
R
1
R
2
/R
1
Min.
鈭?/div>
鈭?.0
鈭?/div>
鈭?/div>
鈭?/div>
30
鈭?/div>
7
0.8
Typ.
鈭?/div>
鈭?/div>
鈭?.1
鈭?/div>
鈭?/div>
鈭?/div>
250
10
1
Max.
鈭?.5
鈭?/div>
鈭?.3
鈭?.88
鈭?.5
鈭?/div>
鈭?/div>
13
1.2
Unit
V
V
mA
碌A(chǔ)
鈭?/div>
MHz
k鈩?/div>
鈭?/div>
Conditions
V
CC
=
鈭?V,
I
O
=
鈭?00碌A(chǔ)
V
O
=
鈭?.3V,
I
O
=
鈭?0mA
I
O
/I
I
=
鈭?0mA
/
鈭?.5mA
V
I
=
鈭?V
V
CC
=
鈭?0V,
V
I
=
0V
I
O
=
鈭?mA,
V
O
=
鈭?V
V
CE
=
鈭?0mA,
I
E
=
5mA, f
=
100MHZ
鈭?/div>
鈭?/div>
*
*
Transition frequency of the device
0.3~0.6
0.3
+0.1
鈭?.05
0.15
+0.1
鈭?.06
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