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FM2G200US60 Datasheet

  • FM2G200US60

  • Molding Type Module

  • 702.97KB

  • 9頁

  • FAIRCHILD

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FM2G200US60
IGBT
FM2G200US60
Molding Type Module
General Description
Fairchild鈥檚 Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
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UL Certified No. E209204
Short circuit rated 10us @ T
C
= 100擄C, V
GE
= 15V
High cpeed cwitching
Low caturation voltage : V
CE(sat)
= 2.2 V @ I
C
= 200A
High input impedance
Fast and soft anti-parallel FWD
Package Code : 7PM-BB
E1/C2
Application
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AC & DC motor controls
General purpose inverters
Robotics
Servo controls
UPS
C1
E2
G1
E1
G2
E2
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
T
SC
P
D
T
J
T
stg
V
iso
Mounting
Torque
T
C
= 25擄C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminals Screw: M5
Mounting Screw: M6
@ T
C
= 25擄C
@ T
C
= 100擄C
@ T
C
= 100擄C
@ T
C
= 25擄C
@ AC 1minute
FM2G200US60
600
鹵
20
200
400
200
400
10
830
-40 to +150
-40 to +125
2500
2.0
2.5
Units
V
V
A
A
A
A
us
W
擄C
擄C
V
N.m
N.m
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
漏2002 Fairchild Semiconductor Corporation
FM2G200US60 Rev. A1

FM2G200US60 產(chǎn)品屬性

  • Fairchild Semiconductor

  • IGBT 模塊

  • IGBT Silicon Modules

  • Dual

  • 600 V

  • 2.2 V

  • 200 A

  • 100 nA

  • 830 W

  • + 150 C

  • 7PM-BB

  • +/- 20 V

  • - 40 C

  • Screw

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