FLU35ZM
FEATURES
銉籋igh
Output Power: P1dB=35.5dBm(typ.)
銉籋igh
Gain: G1dB=11.5dB(typ.)
銉籐ow
Cost Plastic(SMT) Package
銉籘ape
and Reel Available
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLU35ZM is a GaAs FET designed for base station and CPE
application up to a 4.0GHz frequency range. This is a new product
series using a plastic surface mount package that has been optimized
for high volume cost driven applications.
Eudyna鈥檚 stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
o
C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Item
DC Input Voltage
Channel Temperature
Forward Gate Current
Reverse Gate Current
Gate Resistance
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Rating
15
-5
20.8
-55 to +150
175
Unit
V
V
W
o
o
C
C
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25
o
C)
Symbol
V
DS
T
ch
I
gsf
I
gsr
R
g
Condition
Unit
V
o
鈮?/div>
10
鈮?/div>
145
鈮?/div>
19.4
鈮?/div>
-2.0
100
C
mA
mA
鈩?/div>
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Item
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown
Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Thermal Resistance
Symbol
I
DSS
gm
V
p
V
GSO
P
1dB
G
1dB
R
th
Test Conditions
V
DS
=5V, V
GS
=0V
V
DS
=5V, I
DS
=800mA
V
DS
=5V, I
DS
=60mA
I
GS
=-60uA
V
DS
=10V
f=2.0GHz
I
DS
=0.6I
DSS
(Typ.)
Channel to Case
Min.
-
-
-1.0
-5
34.5
10.5
-
Limit
Typ.
1200
600
-2.0
-
35.5
11.5
5
Max.
1800
-
-3.5
-
-
-
6
o
Unit
mA
mS
V
V
dBm
dB
C /W
CASE STYLE: ZM
Note1: Product supplied to this specification are 100% DC performance tested.
Note2: The RF parameters are measured on a lot basis by sample testing 10 pcs/lot.
Acceptance Criteria:(accept/reject)=(0/1). Any lot failure shall be 100% retested.
ESD
Class
鈪?/div>
2000 V錕?frac12;錕?/div>
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5k鈩?
Edition 1.2
Jan 2004
G.C.P.:Gain Compression Point
1
FLU35ZM相關型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
L-Band Medium & High Power GaAs FET
EUDYNA [Eu...
-
英文版
L-Band Medium & High Power GaAs FET
ETC
-
英文版
L-Band Medium & High Power GaAs FET
ETC [ETC]
1
2
3
4
5
6
7
8
