FLU17ZM
FEATURES
銉籋igh
Output Power: P1dB=32.5dBm(typ.)
銉籋igh
Gain: G1dB=12.5dB(typ.)
銉籐ow
Cost Plastic(SMT) Package
銉籘ape
and Reel Available
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLU17ZM is a GaAs FET designed for base station and CPE
applications. This is a new product series using a plastic surface mount
package that has been optimized for high volume cost driven applications.
Fujitsu鈥檚 stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25鈩?
Item
Drain-Source Voltage
Gate-Soutce Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Rating
15
-5
8.3
-55 to +150
150
Unit
V
V
W
鈩?/div>
鈩?/div>
Recommended Operating Condition (Case Temperature Tc=25鈩?
Item
DC Input Voltage
Channel Temperature
Forward Gate Current
Reverse Gate Current
Gate Resistance
Symbol
V
DS
T
ch
I
gsf
I
gsr
R
g
Condition
鈮?/div>
10
鈮?/div>
145
鈮?/div>
9..6
鈮?1.0
200
Unit
V
鈩?/div>
mA
mA
惟
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25鈩?
Item
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown
Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Thermal Resistance
CASE STYLE: ZM
Symbol
I
DSS
gm
V
p
V
GSO
P
1dB
G
1dB
R
th
Test Conditions
V
DS
=5V, V
GS
=0V
V
DS
=5V, I
DS
=400mA
V
DS
=5V, I
DS
=30mA
I
GS
=-30uA
V
DS
=10V,
f=2.0GHz,
I
DS
=0.6I
DSS
(Typ.)
Channel to Case
Min.
-
-
-1.0
-5
31.5
11.5
-
Limit
Typ.
600
300
-2.0
-
32.5
12.5
12
Max.
900
-
-3.5
-
-
-
15
Unit
mA
mS
V
V
dBm
dB
鈩?W
G.C.P.:Gain Compression Point
Note 1: Product supplied to this specification are 100% DC performance tested.
Note 2: The RF parameters are measured on a lot basis by sample testing 10 pcs/lot.
Acceptance Criteria:(accept/reject)=(0/1). Any lot failure shall be 100% retested.
ESD
Class
鈪?/div>
500
錕?frac12;錕?/div>
1999 V
Note : Based on EIAJ ED-4701 C-111A (C=100pF,R=1.5k惟)
Edition 1.1
May 2003
1
FLU17ZM相關(guān)型號(hào)PDF文件下載
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