Matched Zin/Zout = 50鈩?/div>
銉籋ermetically
Sealed Package
DESCRIPTION
The FLM8596-15F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50鈩?system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
O
C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Rating
15
-5
57.7
-65 to +175
175
Unit
V
V
W
o
C
o
C
Recommended Operating Condition(Case Temperature Tc=25
O
C)
Item
DC Input Voltage
Gate Current
Gate Current
Symbol
V
DS
I
GS
I
GR
R
G
=50
鈩?/div>
R
G
=50
鈩?/div>
Condition
Limit
Unit
V
mA
mA
鈮?/div>
10
鈮?/div>
16.7
鈮?/div>
-3.62
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
O
C)
Item
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Symbol
I
DSS
g
m
V
p
V
GSO
P
1dB
G
1dB
I
dsr
畏
add
鈭咷
R
th
鈭員
ch
Test Conditions
V
DS
=5V, V
GS
=0V
V
DS
=5V, I
DS
=2.4A
V
DS
=5V, I
DS
=240mA
I
GS
=-300碌A(chǔ)
Min.
-
-
-0.5
-5.0
41.0
6.5
-
-
-
-
-
Limit
Typ.
7.2
4500
-1.5
-
42.0
7.5
4.0
32
-
2.3
-
Max.
10.8
-
-3.0
-
-
-
5.0
-
1.2
2.6
100
Unit
A
mS
V
V
dBm
dB
A
%
dB
o
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
Thermal Resistance
Channel Temperature Rise
V
DS
=10V
f=8.5 - 9.6 GHz
I
DS
=0.5Idss
Zs=Z
L
=50
鈩?/div>
Channel to Case
10V X Idsr X Rth
C/W
o
C
CASE STYLE: IB
ESD
Class
鈪?/div>
2000V銆€~
G.C.P.:Gain Compression Point
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k鈩?
Edition 1.2
September 2004
1
FLM8596-15F相關(guān)型號(hào)PDF文件下載
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