Impedance Matched Zin/Zout = 50鈩?/div>
Hermetically Sealed
DESCRIPTION
The FLM7785-18F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna鈥檚 stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25擄C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
PT
Tstg
Tch
Tc = 25擄C
Condition
Rating
15
-5
83.3
-65 to +175
175
Unit
V
V
W
擄C
擄C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 18.0 and -8.4 mA respectively with
gate resistance of 25鈩?
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25擄C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
3rd Order Intermodulation
Distortion
Thermal Resistance
Channel Temperature Rise
CASE STYLE:
IK
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
畏
add
鈭咷
IM3
Rth
鈭員
ch
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 5100mA
VDS = 5V, IDS = 450mA
IGS = -450碌A(chǔ)
VDS = 10V,
IDS
=
0.55 IDSS (Typ.),
f = 7.7 ~ 8.5 GHz,
ZS=ZL= 50 ohm
f = 8.5 GHz,
鈭唂
= 10 MHz
2-Tone Test
Pout = 31.5dBm S.C.L.
Channel to Case
10V x Idsr x Rth
Min.
-
-
-1.0
-5
41.5
6.0
-
-
-
-42
-
-
Limit
Typ. Max.
8.1 12.75
-
4350
-2.0
-
42.5
7.0
-3.5
-
-
-
Unit
A
mS
V
V
dBm
dB
mA
%
dB
dBc
擄C/W
擄C
4700 5800
29
-
-
鹵0.6
-45
1.6
-
-
1.8
80
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.2
August 2004
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