Impedance Matched Zin/Zout = 50鈩?/div>
Hermetically Sealed Package
C-Band Internally Matched FET
DESCRIPTION
The FLM6472-4F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna鈥檚 stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25擄C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
PT
Tstg
Tch
Tc = 25擄C
Condition
Rating
15
-5
25
-65 to +175
175
Unit
V
V
W
擄C
擄C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with
gate resistance of 100鈩?
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25擄C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
3rd Order Intermodulation
Distortion
Thermal Resistance
Channel Temperature Rise
CASE STYLE:
IB
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
畏
add
鈭咷
IM3
Rth
鈭員
ch
f = 7.2 GHz,
鈭唂
= 10 MHz
2-Tone Test
Pout = 25.5dBm S.C.L.
Channel to Case
10V x Idsr x Rth
VDS =10V,
IDS
=
0.65 IDSS (Typ.),
f = 6.4 ~ 7.2 GHz,
ZS=ZL= 50 ohm
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS =1100mA
VDS = 5V, IDS = 85mA
IGS = -85碌A
Min.
-
-
-0.5
-5.0
35.5
8.5
-
-
-
-44
-
-
Limit
Typ. Max.
1700 2600
1700
-1.5
-
36.5
9.5
-
-3.0
-
-
-
Unit
mA
mS
V
V
dBm
dB
mA
%
dB
dBc
擄C/W
擄C
1100 1300
36
-
-46
5.0
-
-
鹵0.6
-
6.0
80
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.3
August 2004
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