鈮?/div>
-23.2
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Item
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdow n Voltage
Output Pow er at 1dB G.C.P.
Pow er Gain at 1dB G.C.P.
Drain Current
Pow er-added Efficiency
Gain Flatness
3rd Order Interm odulation
Distortion
Sym bol
I
DSS
g
m
V
p
V
GSO
P
1d B
G
1d B
I
d s r
畏
ad d
鈭?/div>
G
IM
3
Condition
VDS=5V, VGS=0V
VDS=5V, IDS=8.0A
VDS=5V, IDS=480mA
IGS=-480uA
VDS=10V
f=5.9 - 6.4 GHz
IDS(DC)=8.0A(typ.)
Zs=ZL=50 ohm
f=6.4 GHz
鈭?/div>
f=10MHz, 2-tone Test
Pout=35.0dBm(S.C.L.)
Channel to Case
10V x IDS(DC) X R
th
Min.
-
-
-0.5
-5.0
45.0
8.0
-
-
-
-38
-
-
Lim it
Typ.
16
16
-1.5
-
45.5
9.0
8.5
36
-
-40
Max.
-
-
-3.0
-
-
-
9.5
-
1.2
-
Unit
A
S
V
V
dBm
dB
A
%
dB
dBc
R
th
Therm al Resistance
鈭?/div>
T
ch
Channel Tem perature Rise
CASE STYLE : IK
ESD
Class III
2000V
銆€
~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
鈩?/div>
)
o
1.1
1.3
C/W
o
-
100
C
G.C.P.:Gain Compression Point
Edition 1.3
September 2004
1
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