鈮?/div>
-23.2
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Item
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdow n Voltage
Output Pow er at 1dB G.C.P.
Pow er Gain at 1dB G.C.P.
Drain Current
Pow er-added Efficiency
Gain Flatness
Therm al Resistance
Channel Tem perature Rise
Sym bol
I
DSS
g
m
V
p
V
GSO
P
1d B
G
1d B
I
d s r
N
ad d
鈭?/div>
G
R
t h
鈭?/div>
T
ch
Condition
V
DS
=5V, V
GS
=0V
V
DS
=5V, I
DS
=8.0A
V
DS
=5V, I
DS
=960mA
I
GS
=-960uA
V
DS
=12V
I
DS
(DC)=8.0A (typ.)
f= 5.3
~
5.9 GHz
Zs=Z
L
=50 ohm
Channel to Case
12V x I
DS
(DC) X R
t h
Min.
-
-
-1.0
-5.0
46.0
7.5
-
-
-
-
-
Lim it
Typ.
16.0
8000
-2.0
-
46.5
8.5
8.5
36
-
0.8
-
Max.
-
-
-3.5
-
-
-
10.0
-
1.4
1.0
100
Unit
A
mS
V
V
dBm
dB
A
%
dB
o
C/W
o
C
CASE STYLE : IK
ESD
Class III
2000V
銆€
~
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5k
鈩?/div>
)
G.C.P.: Gain Compression Point
Edition 1.2
September 2004
1
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