Impedance Matched Zin/Zout = 50鈩?/div>
Hermetically Sealed
DESCRIPTION
The FLM1213-4F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain
in a 50 ohm system.
Eudyna鈥檚 stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25擄C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
PT
Tstg
Tch
Tc = 25擄C
Condition
Rating
15
-5
25.0
-65 to +175
175
Unit
V
V
W
擄C
擄C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with
gate resistance of 100鈩?
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25擄C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-Added Efficiency
Gain Flatness
3rd Order Intermodulation
Distortion
Thermal Resistance
Channel Temperature Rise
CASE STYLE: IA
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
畏
add
鈭?/div>
G
IM3
Rth
鈭員
ch
f = 13.2GHz,
鈭唂
= 10MHz
2-Tone Test
Pout = 25.5dBm S.C.L.
Channel to Case
10V x Idsr x Rth
VDS = 10V
f = 12.7 ~ 13.2 GHz
IDS
=
0.65 IDSS(Typ.)
ZS = ZL = 50鈩?/div>
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 1100mA
VDS = 5V, IDS = 85mA
IGS = -85碌A
Min.
-
-
-0.5
-5.0
35.5
5.5
-
-
-
-44
-
-
Limit
Typ. Max.
1700
1700
-1.5
-
36.0
6.5
1100
28
-
-46
5.0
-
2600
-
-3.0
-
-
-
1300
-
鹵0.6
-
6.0
80
Unit
mA
mS
V
V
dBm
dB
mA
%
dB
dBc
擄C/W
擄C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.4
August 2004
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