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SOT23 SILICON PLANAR LOW LEAKAGE

COMMON ANODE DIODE PAIR

ISSUE 2 聳 JANUARY 1996

7

1

FLLD263

2

DIODE PIN CONNECTION

1

3

2

3

SOT23

PART MARKING DETAIL 聳 D63

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Repetitive Peak Reverse Voltage

Average Rectified Forward Current

Power Dissipation at T

amb

= 25擄C

Operating and Storage Temperature Range

SYMBOL

V

RRM

I

F(AV)

P

tot

T

j

:T

stg

VALUE

100

250

3.0

330

-55 to +150

UNIT

V

mA

A

mW

擄C

Non-Repetitive Peak Forward Current (t=1

碌

s) I

FSM

ELECTRICAL CHARACTERISTICS (at T

amb

= 25擄C unless otherwise stated).

PARAMETER

Reverse Current

Reverse Recovery Time*

Forward Recovery Time

Diode Capacitance

SYMBOL

I

R

t

rr

t

fr

C

d

MIN.

MAX.

5

5

400

10

4

Typ

0.9

1.4

UNIT CONDITIONS.

碌

A

nA

ns

ns

pF

V

RRM

=100V

V

RRM

=100V, T

amb

=150擄C

I

F

= I

R

=50 聳 400mA

I

F

=10mA

V

R

=1V, f=1MHz

I

F

=10mA,

Rise time=5ns

鹵

20%

I

F

=-200mA

Forward Overshoot Voltage V

fr

Forward Voltage

V

F

V

V

*Time for I

R

to recover to 10% of I

R

peak

3 - 98

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