鈥?/div>
Push-Pull Configuration
High Power Output: 80W (Typ.)
High PAE: 50% (Typ.)
Broad Frequency Range: 2100 to 2200 MHz.
Suitable for class AB operation.
DESCRIPTION
The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and
complexity of highly linear, high power base station transmitting amplifiers.
This new product is uniquely suited for use in W-CDMA and IMT 2000 base
station amplifiers as it offers high gain, long term reliability and ease of use.
APPLICATIONS
鈥?Solid State Base-Station Power Amplifier.
鈥?W-CDMA and IMT 2000 Communication Systems.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25擄C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Tc = 25擄C
Condition
Rating
15
-5
136
-65 to +175
+175
Unit
V
V
W
擄C
擄C
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 176 and -51.8 mA respectively with
gate resistance of 10鈩?
3. The operating channel temperature (Tch) should not exceed 145擄C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25擄C)
Item
Drain Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power
Linear Gain
Drain Current
Power-Added Efficiency
Thermal Resistance
CASE STYLE: IU
Symbol
I
DSS
V
p
V
GSO
P
out
GL
I
DSR
畏
add
R
th
Conditions
V
DS
= 5V, V
GS
= 0V
V
DS
= 5V, I
DS
= 220mA
I
GS
= -2.2mA
V
DS
= 12V
f = 2.17 GHz
I
DS
= 2.0A
Pin = 40.0dBm
Channel to Case
Limits
Min. Typ. Max.
-
-0.1
-5
48.0
10.0
-
-
-
8
-0.3
-
49.0
11.0
11.5
50
0.8
-
-0.5
-
-
-
15
-
1.1
Unit
A
V
V
dBm
dB
A
%
擄C/W
Edition 1.1
October 2004
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