鈥?/div>
High Output Power: P1dB = 31.8dBm(Typ.)
High Gain: G1dB = 7.5dB(Typ.)
High PAE:
畏
add = 35%(Typ.)
Proven Reliability
Hermetic Metal/Ceramic Package
DESCRIPTION
The FLC167WF is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu鈥檚 stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25擄C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
PT
Tstg
Tch
Tc = 25擄C
Condition
Rating
15
-5
7.5
-65 to +175
175
Unit
V
V
W
擄C
擄C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 9.6 and -1.0 mA respectively with
gate resistance of 200鈩?
3. The operating channel temperature (Tch) should not exceed 145擄C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25擄C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
畏
add
Rth
Channel to Case
VDS = 10V,
IDS
=
0.6 IDSS (Typ.),
f = 6 GHz
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 400mA
VDS = 5V, IDS = 30mA
IGS = -30碌A(chǔ)
Min.
-
-
-1.0
-5
30.5
6.5
-
-
Limit
Typ. Max.
600
300
-2.0
-
31.8
7.5
35
15
900
-
-3.5
-
-
-
-
20
Unit
mA
mS
V
V
dBm
dB
%
擄C/W
Power Gain at 1dB G.C.P.
Power-added Efficiency
Thermal Resistance
CASE STYLE:
WF
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1
1
2
3
4
