MOS FET FKV660S
Absolute Maximum Ratings
(Ta=25潞C)
Symbol
Ratings
V
DSS
60
V
GSS
+20, 鈥?0
鹵60
I
D
鹵180
I
D(pulse)
P
D
60(Tc=25潞C)
Tch
150
Tstg
鈥?0 to +150
P
W
100碌s, duty 1%
Unit
V
V
A
A
W
潞C
潞C
Electrical Characteristics
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
TH
Re
(yfs)
R
DS(ON)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
SD
Test Conditions
I
D
=100碌A(chǔ), V
GS
=0V
V
GS
=+20V
V
GS
=鈥?0V
V
DS
=60V, V
GS
=0V
V
DS
=10V, I
D
=250碌A(chǔ)
V
DS
=10V, I
D
=25A
V
GS
=10V, I
D
=25A
V
DS
=10V
f=1.0MHz
V
GS
=0V
I
D
=25A
V
DD
12V
R
L
=0.48鈩? V
GS
=10V
I
SD
=50A, V
GS
=0V
min
60
Ratings
typ
( Ta=25潞C)
max
+10
鈥?
100
2.5
11
2500
900
150
50
400
400
300
1.0
14
Unit
V
碌A(chǔ)
碌A(chǔ)
V
S
m鈩?/div>
pF
pF
pF
ns
ns
ns
ns
V
External Dimensions
TO220S
10.2
鹵
0.3
(1.4)
4.44
鹵
0.2
1.3
鹵
0.2
1.27
鹵
0.2
+
0.2
0.86
鈥?/div>
0.1
2.54
鹵
0.5
1.2
鹵
0.2
2.54
鹵
0.5
3.0
鈥?.5
+0.3
(1.5)
1.0
20
10.0
鈥?.5
8.6
鹵
0.3
+0.3
a
b
蠁1.6
+
0.2
0.1
鈥?/div>
0.1
0.4
鹵
0.1
a) Part No.
b) Lot No.
(Unit : mm)
1.5
78