MOS FET FKV560 (under development)
Absolute Maximum Ratings
(Ta=25潞C)
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)
*
P
D
Tch
Tstg
Ratings
50
鹵20
鹵60
鹵180
40 (Tc=25潞C)
150
鈥?5 to +150
Unit
V
V
A
A
W
潞C
潞C
Electrical Characteristics
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
TH
Re
(yfs)
R
DS (ON)
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
V
SD
Test Conditions
I
D
= 100碌A(chǔ), V
GS
= 0V
V
GS
= +20V
V
GS
= 鈥?0V
V
DS
= 50V, V
GS
= 0V
V
DS
= 10V, I
D
= 250碌A(chǔ)
V
DS
= 10V, I
D
= 25A
V
GS
= 10V, I
D
= 25A
V
DS
= 10V
f = 1.0MHz
V
GS
= 0V
I
D
= 25A
V
DD
12V
R
L
= 0.48鈩?/div>
V
GS
= 10V
I
SD
= 50A, V
GS
= 0V
min
50
+10
鈥?
100
2.3
9
2000
1000
150
To be
defined
1.0
1.5
11
Ratings
typ
max
(Ta=25潞C)
Unit
V
碌A(chǔ)
碌A(chǔ)
V
S
m鈩?/div>
pF
pF
pF
ns
ns
ns
ns
V
External Dimensions
FM20 (full-mold)
3.3
鹵0.2
10.0
鹵0.2
4.2
鹵0.2
2.8
C 0.5
1.3
20.0
16.9
鹵0.3
8.4
鹵0.2
0.8
鹵0.2
4.0
鹵0.2
a
b
13.0 min
* P
W
100碌s, duty 1%
3.9
鹵0.2
1.35
鹵0.15
1.35
鹵0.15
0.85
鈥?.1
+0.2
2.54
2.54
0.45
鈥?.1
+0.2
2.4
鹵0.2
2.2
鹵0.2
G D S
a) Type No.
b) Lot No.
(Unit: mm)
74
1
