MOS FET FKV560S (under development)
Absolute Maximum Ratings
(Ta=25潞C)
Symbol
Ratings
V
DSS
50
鹵20
V
GSS
鹵45
I
D
鹵135
I
D (pulse)
*
P
D
60 (Tc=25潞C)
Tch
150
Tstg
鈥?5 to +150
* P
W
100碌s, duty 1%
Unit
V
V
A
A
W
潞C
潞C
Electrical Characteristics
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
TH
Re
(yfs)
R
DS (ON)
Ciss
Coss
Crss
t
d (on)
t
r
t
d (off)
t
f
V
SD
Test Conditions
I
D
= 100碌A(chǔ), V
GS
= 0V
V
GS
= +20V
V
GS
= 鈥?0V
V
DS
= 50V, V
GS
= 0V
V
DS
= 10V, I
D
= 250碌A(chǔ)
V
DS
= 10V, I
D
= 25A
V
GS
= 10V, I
D
= 25A
V
DS
= 10V
f = 1.0MHz
V
GS
= 0V
I
D
= 25A
V
DD
12V
R
L
= 0.48鈩?/div>
V
GS
= 10V
I
SD
= 50A, V
GS
= 0V
min
50
+10
鈥?
100
2.0
9
2000
1000
150
To be
defined
1.0
1.5
11
Ratings
typ
max
(Ta=25潞C)
Unit
V
External Dimensions
TO220S
10.2
鹵0.3
(1.4)
4.44
鹵0.2
1.3
鹵0.2
碌A(chǔ)
碌A(chǔ)
V
S
m鈩?/div>
pF
pF
pF
ns
ns
ns
ns
V
10.0
鈥?.5
+0.3
a
8.6
鹵0.3
(1.5)
1.0
20.0
1.6
+0.2
b
0.1
鈥?.1
+0.3
3.0
鈥?.5
1.27
鹵0.2
0.86
鈥?.1
1.2
2.54
鹵0.5
鹵0.2
+0.2
0.4
鹵0.1
2.54
鹵0.5
a) Type No.
b) Lot No.
(Unit: mm)
76
1
