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FJYF2906 Datasheet

  • FJYF2906

  • PNP Multi-Chip General Purpose Amplifier

  • 142.50KB

  • 5頁

  • FAIRCHILD

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FJYF2906
FJYF2906
PNP Multi-Chip General Purpose Amplifier
鈥?Collector-Emitter Voltage: V
CEO
= 40V
鈥?Amplifier and Switching Application
鈥?E2 is on pin 1
C2
B1
B2
(Pin1)
C1
E1
E2
SOT-563F
Mark: S1
Absolute Maximum Ratings
T
A
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Value
40
40
5
150
-55 ~ +150
Units
V
V
V
mA
擄C
Electrical Characteristics
T
A
=25擄C unless otherwise noted
Symbol
Off Characteristics
BV
CEO
BV
CBO
BV
EBO
I
CEX
h
FE
Parameter
Test Condition
I
C
= 1
M
A, I
B
= 0
Min.
40
40
5
50
60
80
100
60
30
Typ.
Max.
Units
V
V
V
N
A
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain *
I
E
= 10
碌
A, I
C
= 0
V
CE
= 30V, V
BE
= 3V
V
CE
= 1V, I
C
= 0.1
M
A
V
CE
= 1V, I
C
= 1mA
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 50mA
V
CE
= 1V, I
C
= 100mA
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
V
CE
= 20V, I
C
= 10mA
f = 100MHz
V
CB
= 5V, I
E
= 0, f = 1MHz
V
EB
= 0.5V, I
C
= 0, f = 1MHz
I
C
= 10
碌
A, I
E
= 0
On Characteristics
300
V
CE
(sat)
V
BE
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.3
0.5
0.65
0.95
1
V
V
V
V
MHz
Small Signal Characteristics
f
T
C
obo
C
ibo
Current gain Bandwidth Product
Output Capacitance
Input Capacitance
250
4.5
10
pF
pF
* Pulse Test: Pulse Width
鈮?/div>
300ms, Duty Cycle
鈮?/div>
2.0%
NOTE:
All voltage (V) and currents (A) are negative for PNP transistors.
漏2002 Fairchild Semiconductor Corporation
Rev. A1, September 2002

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