FJX3904
FJX3904
General Purpose Transistor
3
2
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CES
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Parameter
SOT-323
1. Base 2. Emitter 3. Collector
1
Value
60
40
6
200
350
-55 ~ 150
Units
V
V
V
mA
mW
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
Parameter
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
* DC Current Gain
Test Condition
I
C
=10碌A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10碌A, I
C
=0
V
CE
=30V, V
EB
=3V
V
CE
=1V, I
C
=0.1mA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=100mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CB
=5V, I
E
=0, f=1MHz
V
CE
=20V, I
C
=10mA
I
C
=100碌A, V
CE
=5V, R
S
=1K鈩?/div>
f=10Hz to 15.7KHz
V
CC
=3V, V
BE
=0.5V
I
C
=10mA, I
B1
=1mA
V
CC
=3V, I
C
=10mA
I
B1
=I
B2
=1mA
300
5
70
250
0.65
40
70
100
60
30
Min.
60
40
6
50
Max.
Units
V
V
V
nA
300
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
NF
t
ON
t
OFF
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Noise Figure
Turn On Time
Turn Off Time
0.2
0.3
0.85
0.95
4
V
V
V
V
pF
MHz
dB
ns
ns
* Pulse Test: Pulse Width鈮?00碌s, Duty Cycle鈮?%
Marking
S1A
漏2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
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2
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