FJX2907A
FJX2907A
General Purpose Transistor
3
2
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CES
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Parameter
SOT-323
1. Base 2. Emitter 3. Collector
1
Value
-60
-60
-5
-600
325
150
Units
V
V
V
mA
mW
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
Parameter
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Test Condition
I
C
= -10碌A(chǔ), I
E
=0
I
C
= -10mA, I
B
=0
I
E
= -10碌A(chǔ), I
C
=0
V
CB
= -50V, I
E
=0
V
CE
= -10V, I
E
= -0.1mA
V
CE
= -10V, I
C
= -1.0mA
V
CE
= -10V, I
C
= -10mA
*V
CE
= -10V, IC= -150mA
*V
CE
= -10V, I
C
= -500mA
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
I
C
= -50mA, V
CE
= -20V,
f=100MHz
V
CB
= -10V, I
E
=0
f=1.0MHz
V
CC
= -30V, I
C
= -150mA
I
B1
= -15mA
V
CC
= -6V, I
C
= -150mA
I
B1
=I
B2
=15mA
200
8
45
100
75
100
100
100
50
Min.
-60
-60
-5
-0.01
Max.
Units
V
V
V
碌A(chǔ)
300
-0.4
-1.6
-1.3
-2.6
V
V
V
V
MHz
pF
ns
ns
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
t
ON
t
OFF
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Turn Off Time
* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%
Marking
S2F
漏2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
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