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FJX1182

FJX1182

Low Frequency Power Amplifier

3

2

SOT-323

1. Base 2. Emitter 3. Collector

1

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

a

=25擄C unless otherwise noted

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

T

STG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

Parameter

Ratings

-35

-30

-5

-500

150

150

-55 ~ 150

Units

V

V

V

mA

mW

擄C

擄C

Electrical Characteristics

T

a

=25擄C unless otherwise noted

Symbol

I

CBO

I

EBO

h

FE1

h

FE2

V

CE

(sat)

V

BE

(on)

f

T

C

ob

Parameter

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

Test Condition

V

CB

= -35, I

E

=0

V

EB

= -5V, I

C

=0

V

CE

= -1V, I

C

= -100mA

V

CE

= -6V, I

C

= -400mA

I

C

= -100mA, I

B

= -10mA

I

C

= -100mA, V

CE

= -1V

I

C

= -20mA, V

CE

= -6V

V

CB

= -6V, I

E

= 0

f=1MHz

70

25

-0.1

-0.8

200

13

Min.

Typ.

Max.

-0.1

-0.1

240

-0.25

-1.0

V

V

MHz

pF

Units

碌A(chǔ)

碌A(chǔ)

h

FE

Classification

Classification

h

FE1

O

70 ~ 140

Y

120 ~ 240

Marking

SD X

Grade

漏2002 Fairchild Semiconductor Corporation

Rev. A2, August 2002

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• FJX1182
  英文版
  Low Frequency Power Amplifier
  FAIRCHILD
  FJX1182
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  英文版
  Low Frequency Power Amplifier
  FAIRCHILD ...
  FJX1182

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