FJV992
FJV992
Audio Frequency Low Noise Amplifier
鈥?Complement to FJV1845
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-120
-120
-5
-50
300
150
-55 ~ 150
Units
V
V
V
mA
mW
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
NV
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Emitter Breakdown Voltage
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Voltage
Test Condition
I
C
= -100碌A, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -10碌A, I
C
=0
V
EB
= -6V, I
C
=0
V
CE
= -6V, I
C
= -0.1mA
V
CE
= -6V, I
C
= -1mA
I
C
= -10mA, I
B
= -1mA
V
CE
= -6V, I
C
= -1mA
V
CE
= -6V, I
C
= -1mA
V
CB
= -30V, I
E
=0, f=1MHz
-0.55
50
3
40
150
200
Min.
-120
-120
-5
-30
800
-300
-0.65
mV
V
MHz
pF
mV
Max.
Units
V
V
V
nA
h
FE2
Classification
Classification
h
FE2
P
200 ~ 400
Marking
F
300 ~ 600
E
400 ~ 800
2J P
h
FE
Classification
漏2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
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