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FJV3109R Datasheet

  • FJV3109R

  • NPN Epitaxial Silicon Transistor

  • 4頁

  • FAIRCHILD

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FJV3109R
FJV3109R
Switching Application
(Bias Resistor Built In)
鈥?Switching circuit, Inverter, Interface circuit, Driver Circuit
鈥?Built in bias Resistor (R=4.7K鈩?
鈥?Complement to FJV4109R
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
Marking
Equivalent Circuit
C
R29
B
R
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
40
40
5
100
200
150
-55 ~ 150
E
Units
V
V
V
mA
mW
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
I
CBO
h
FE
V
CE
(sat)
C
ob
f
T
R
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Input Resistor
Test Condition
I
C
=100碌A(chǔ), I
E
=0
I
E
=1mA, I
B
=0
V
CB
=30V, I
E
=0
V
CE
=5V, I
C
=1mA
I
C
=10mA, I
B
=1mA
V
CB
=10V, I
E
=0
f=1MHz
V
CE
=10V, I
C
=5mA
3.2
3.70
250
4.7
6.2
100
Min.
40
40
0.1
600
0.3
V
pF
MHz
K鈩?/div>
Typ.
Max.
Units
V
V
碌A(chǔ)
漏2002 Fairchild Semiconductor Corporation
Rev. A, August 2002

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