FJU1615
FJU1615
For Output Amplifier of Electronic Flash Unit
鈥?Low Collector-Emitter Saturation Voltage
鈥?High Performance at Low Supply Voltage
1
I-PACK
1. Base 2. Collector 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-30
-20
-7
-10
1
150
-55 ~ 150
Units
V
V
V
A
W
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
T
ON
T
STG
T
F
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Band Width Product
Output Capacitance
Turn On Time
Storage Time
Fall Time
Test Condition
I
C
=-100碌A(chǔ), I
E
=0
I
C
=-1mA, I
B
=0
I
C
=-100碌A(chǔ), I
C
=0
V
CB
=-20V, I
E
=0
V
EB
=-7V, I
C
=0
V
CE
=-2V, I
C
=-0.5A
V
CE
=-2V, I
C
=-4A
I
C
=-4A, I
B
=-0.05A
I
C
=-4A, I
B
=-0.05A
V
CE
=-5V, I
C
=-1.5A
V
CB
=-10V, I
E
=0, f=1MHz
I
C
=-5A, I
B1
=-I
B2
=-0.125A
R
L
=2鈩? V
CC
=-10V
200
160
-0.17
-0.9
180
220
80
300
60
Min.
-30
-20
-7
-1.0
-1.0
600
-0.25
-1.2
V
V
MHz
pF
ns
ns
ns
Typ.
Max.
Units
V
V
V
碌A(chǔ)
碌A(chǔ)
*
Pulse Test : PW
鈮?/div>
350碌s,Duty
Cycle
鈮?/div>
2%
h
FE1
Classification
Classification
h
FE1
L
200 ~ 400
K
300 ~ 600
漏 2001 Fairchild Semiconductor Corporation
Rev. A. February 2001
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