FJT44
FJT44
High Voltage Transistor
1
SOT-223
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Parameter
1.Base
2.Collector
3.Emitter
Value
500
400
6
300
2
150
Units
V
V
V
mA
W
擄C
T
STG
Storage Temperature
-55 ~ 150
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
h
FE
Parameter
Collector-Base Breakdown Voltage
* Collector -Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Test Condition
I
C
=100碌A(chǔ), I
B
=0
I
C
=1mA, I
B
=0
I
E
=100碌A(chǔ), I
C
=0
V
CB
=400V, I
E
=0
V
CE
=400V, I
B
=0
V
EB
=4V, I
C
=0
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=50mA
V
CE
=10V, I
C
=100mA
I
C
=1mA, I
B
=0.1mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
V
CB
=20V, I
E
=0, f=1MHz
40
50
45
40
Min.
500
400
6
0.1
0.5
0.1
200
Max.
Units
V
V
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
V
CE
(sat)
* Collector-Emitter Saturation Voltage
0.4
0.5
0.75
0.75
7
V
V
V
V
pF
V
BE
(sat)
* Base-Emitter Saturation Voltage
Output Capacitance
C
ob
* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%
漏2002 Fairchild Semiconductor Corporation
Rev. A3, August 2002