FJPF5555
FJPF5555
High Voltage Switch Mode Application
鈥?Fast Speed Switching
鈥?Wide Safe Operating Area
鈥?Suitable for Electronic Ballast Application
1
TO-220F
1.Base
2.Collector
3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
1050
400
14
5
10
40
150
- 55 ~ 150
Units
V
V
V
A
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
C
ob
t
ON
t
STG
t
F
t
ON
t
STG
t
F
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
*
DC
Test Condition
I
C
=500碌A, I
E
=0
I
C
=5mA, I
B
=0
I
E
=500碌A, I
C
=0
V
CE
=5V, I
C
=10mA
V
CE
=3V, I
C
=0.8A
I
C
=1A, I
B
=0.2A
I
C
=3.5A, I
B
=1.0A
I
C
=3.5A, I
B
=1.0A
V
CB
=10V, f=1MHz
V
CC
=125V, I
C
=0.5A
I
B1
=45mA, I
B2
=0.5A
R
L
=250鈩?/div>
V
CC
=250V, I
C
=2.5A
I
B1
=0.5A, I
B2
=1.0A
R
L
=100鈩?/div>
Min.
1050
400
14
10
20
Typ.
Max.
Units
V
V
V
Current Gain
40
0.5
1.5
1.2
45
1.0
1.2
0.3
2.0
2.5
0.3
V
V
V
pF
碌s
碌s
碌s
碌s
碌s
碌s
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Turn On Time
Storage Time
Fall Time
Turn On Time
Storage Time
Fall Time
* Pulse test: PW鈮?00碌s, Duty Cycle鈮?%
漏2004 Fairchild Semiconductor Corporation
Rev. A, June 2004
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