FJPF5321
FJPF5321
High Voltage and High Reliability
鈥?High speed Switching
鈥?Wide Safe Operating Area
1
TO-220F
2.Collector
3.Emitter
1.Base
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Power Dissipation(T
C
=25擄C)
Junction Temperature
Storage Temperature
Value
800
500
7
5
10
2
4
40
150
- 55 ~ 150
Units
V
V
V
A
A
A
A
W
擄C
擄C
* Pulse Test: Pulse Width = 5ms, Duty Cycle鈮?0%
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
C
ib
t
ON
t
STG
t
F
t
ON
t
STG
t
F
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain bandwidth Product
Output Capacitance
Input Capacitance
Turn On Time
Storage Time
Fall Time
Turn On Time
Storage Time
Fall Time
Test Condition
I
C
= 1mA, I
E
= 0
I
C
= 5mA, I
B
= 0
I
C
=1mA, I
C
= 0
V
CB
= 800V, I
E
= 0
V
EB
= 7V, I
C
= 0
V
CE
= 5V, I
C
= 0.6A
V
CE
= 5V, I
C
= 3A
I
C
= 3A, I
B
= 0.6A
I
C
= 3A, I
B
= 0.6A
V
CE
= 10V, I
C
= 0.6A
V
CB
= 10V, I
E
= 0, f = 1MHz
V
EB
= 7V, I
C
= 0, f = 1MHz
V
CC
= 125V, I
C
= 1A
I
B1
= -I
B2
= 0.2A
R
L
= 125鈩?/div>
V
CC
= 250V, I
C
= 4A
I
B1
= 0.8A, I
B2
= -1.6A
R
L
= 62.5鈩?/div>
Min.
800
500
7
-
-
15
8
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
14
65
1400
-
-
-
-
-
-
Max.
-
-
-
100
10
40
-
1.0
1.5
-
100
2000
0.5
6.5
0.3
0.5
3.0
0.3
V
V
MHz
pF
pF
碌s
碌s
碌s
碌s
碌s
碌s
Units
V
V
V
碌A
碌A
漏2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
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