FJPF3835
FJPF3835
Power Amplifier
鈥?High Current Capability : I
C
=8A
鈥?High Power Dissipation
鈥?Wide S.O.A
1
TO-220F
2.Collector
3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Value
200
120
8
8
16
30
150
- 55 ~ 150
Units
V
V
V
A
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
t
ON
t
F
t
STG
* Pulse Test : PW=20碌s
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
*
DC
Test Condition
I
C
=5mA, I
E
=0
I
C
=10mA, R
BE
=鈭?/div>
I
E
=5mA, I
C
=0
V
CB
=80V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=4V, I
C
=3A
I
C
=3A, I
B
=0.3A
I
C
=3A, I
B
=0.3A
V
CE
=5V, I
C
=1A
V
CB
=10V, f=1MHz
V
CC
=20V,
I
C
=1A=10I
B1
=-10I
B2
R
L
=20鈩?/div>
Min.
200
120
8
Typ.
Max.
Units
V
V
V
0.1
0.1
120
250
0.5
1.2
30
210
0.26
0.68
6.68
mA
mA
V
V
MHz
pF
碌s
碌s
碌s
Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Fall Time
Storage Time
漏2004 Fairchild Semiconductor Corporation
Rev. A, May 2004
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