FJPF3305
FJPF3305
High Voltage Switch Mode Application
鈥?High Speed Switching
鈥?Suitable for Electronic Ballast and Switching Regulator
1
TO-220F
2.Collector
3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
700
400
9
4
8
2
30
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
*
DC
Test Condition
I
C
=500碌A(chǔ), I
E
=0
I
C
=5mA, I
B
=0
I
E
=500碌A(chǔ), I
C
=0
V
CB
=700V, I
E
=0
V
EB
=9V, I
C
=0
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=2A
I
C
=1A, I
B
=0.2A
I
C
=2A, I
B
=0.5A
I
C
=4A, I
B
=1A
Min.
700
400
9
Typ.
Max.
Units
V
V
V
1
1
19
8
35
40
0.5
0.6
1
1.2
1.6
4
65
0.8
4
0.9
碌A(chǔ)
碌A(chǔ)
Current Gain
Collector-Emitter Saturation Voltage
V
V
V
V
V
MHz
pF
碌s
碌s
碌s
V
BE
(sat)
f
T
C
ob
t
ON
t
STG
t
F
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Storage Time
Fall Time
I
C
=1A, I
B
=0.2A
I
C
=2A, I
B
=0.5A
V
CE
=5V, I
C
=1A
V
CB
=10V, f=1MHz
V
CC
=125V,
I
C
=2A=5I
B1
=-5I
B2
R
L
=62.5鈩?/div>
* Pulse test: PW鈮?00碌s, Duty Cycle鈮?%
h
FE
Classification
Classification
h
FE2
漏2004 Fairchild Semiconductor Corporation
R
19 ~ 28
O
26 ~ 35
Rev. A, March 2004
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