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FJP9100

High Voltage Power Darlington Transistor

鈥?Built-in Resistor at Base-Emitter : R

1

(Typ.)=2000

鈩?/div>

鈥?Built-in Resistor at Base : R

B

(Typ.)=700

鹵

100鈩?/div>

1

1.Base

TO-220

2.Collector

3.Emitter

NPN Silicon Darlington Transistor

Absolute Maximum Ratings

T

C

=25擄C unless otherwise noted

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

P

C

T

J

T

STG

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

*Collector Current (Pulse)

Base Current (DC)

Collector Dissipation (T

C

=25擄C)

Junction Temperature

Storage Temperature

Value

600

275

10

4

6

0.5

40

150

- 55 ~ 150

Units

V

A

W

擄C

R

1

B

R

B

Equivalent Circuit

C

R

1

鈮?/div>

2000鈩?/div>

R B

鈮?/div>

700鈩?/div>

E

* Pulse Test: PW=300碌s, duty Cycle=2% Pulsed

Electrical Characteristics

T

C

=25擄C unless otherwise noted

Symbol

BV

CBO

BV

CER

BV

CEO

(sus)

BV

EBO

I

CBO

I

EBO

h

FE

V

CE

(sat)

V

BE

(sat)

C

ob

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector-Emitter Sustaining Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Output Capacitance

Test Condition

I

C

= 500碌A(chǔ), I

E

= 0

I

C

= 1mA, R

BE

= 330

鈩?/div>

I

C

= 1.5A, I

B

= 50mA, L=25mH

I

E

= 500碌A(chǔ), I

C

= 0

V

CB

= 600V, I

E

= 0

V

EB

= 10V, I

C

= 0

V

CE

= 5V, I

C

= 0.5A

V

CE

= 5V, I

C

= 3A

I

C

= 2A, I

B

= 5mA

I

C

= 2A, I

B

= 5mA

V

CB

= 10V, I

E

= 0, f=1MHz

110

1000

Min.

600

275

10

0.1

5000

1.5

6.0

V

pF

Typ.

Max.

Units

V

mA

漏2003 Fairchild Semiconductor Corporation

Rev. A, May 2003

型號(hào)

版本

描述

廠商

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FJP9100

英文版

High Voltage Power Darlington Transistor

FAIRCHILD

FJP9100
FJP9100

英文版

High Voltage Power Darlington Transistor

FAIRCHILD ...

FJP9100

FJP9100 Datasheet

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FJP9100 Datasheet

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