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FJP5355 Datasheet

  • FJP5355

  • High Voltage Switch Mode Application

  • 72.76KB

  • 5頁

  • FAIRCHILD

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FJP5355
FJP5355
High Voltage Switch Mode Application
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High Speed Switching
Very Low Switching Losses
Very Low Operating Temperature
Wide RBSOA
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter- Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
900
440
14.5
5
7.5
2.5
50
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
EBO
h
FE
Parameter
Collector- Base Breakdown Voltage
Collector- Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Emitter Cut-off Current
*DC Current Gain
Test Condition
I
C
= 500碌A(chǔ), I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 500碌A(chǔ), I
C
= 0
V
EB
= 12V, I
C
= 0
V
CE
= 2V, I
C
= 10mA
V
CE
= 2V, I
C
= 0.8A
V
CE
= 2V, I
C
= 2.5A
I
C
= 0.8A, I
B
= 0.2A
I
C
= 2.5A, I
B
= 0.8A
I
C
= 0.8A, I
B
= 0.2A
I
C
= 2.5A, I
B
= 0.8A
V
CE
= 10V, I
C
= 0.2A
V
CC
= 125V, I
C
= 0.5A
I
B1
= 45mA, -I
B2
= 0.5A
PW=300碌s
4
1.1
1.2
0.4
15
15
7
0.2
0.4
1.0
1.2
V
V
V
V
MHz
碌s
碌s
碌s
Min.
900
440
14.5
1
Typ.
Max.
Units
V
V
V
碌A(chǔ)
V
CE
(sat)
V
BE
(sat)
f
T
t
ON
t
STG
t
F
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
* Pulse test: PW鈮?00碌s, Duty cycle鈮?%
漏2003 Fairchild Semiconductor Corporation
Rev. A, September 2003

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