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FJN965

FJN965

For Output Amplifier of Electronic Flash Unit

鈥?Low Collector-Emitter Saturation Voltage

鈥?High Performance at Low Supply Voltage

1

TO-92

1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25擄C unless otherwise noted

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

T

STG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Dissipation

Junction Temperature

Storage Temperature

Parameter

Ratings

40

20

7

5

0.75

150

-55 ~ 150

Units

V

V

V

A

W

擄C

擄C

Electrical Characteristics

T

C

=25擄C unless otherwise noted

Symbol

BV

CEO

BV

EBO

I

CBO

I

CEO

I

EBO

h

FE1

h

FE2

V

CE

(sat)

f

T

C

ob

Parameter

Collector-Emitter Voltage

Emitter Base Voltage

Collector Cut-off Current

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Current Gain Band Width Product

Collector Output Capacitance

Test Condition

I

C

=1mA, I

B

=0

I

C

=100碌A(chǔ), I

C

=0

V

CB

=10V, I

E

=0

V

CE

=10V, I

B

=0

V

EB

=7V, I

C

=0

V

CE

=2V, I

C

=0.5A

V

CE

=2V, I

C

=2A

I

C

=3A, I

B

=0.1A

V

CE

=6V, I

C

=50mA

V

CB

=20V, I

E

=0, f=1MHz

150

23

230

150

Min.

20

7

0.1

1

0.1

600

1

V

MHz

pF

Typ.

Max.

Units

V

V

碌A(chǔ)

碌A(chǔ)

碌A(chǔ)

漏2002 Fairchild Semiconductor Corporation

Rev. A2, August 2002

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