FJN13003
FJN13003
High Voltage Switch Mode Application
鈥?High Speed Switching
鈥?Suitable for Electronic Ballast up to 21W
1
TO-92
1. Emitter 2. Collector 3.Base
NPN Silicon Transistor Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Collector Power Dissipation(T
a
=25擄C)
Junction Temperature
Storage Temperature
Value
700
400
9
1.5
3
0.75
1.5
1.1
150
- 65 ~ 150
Units
V
V
V
A
A
A
A
W
擄C
擄C
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
EBO
h
FE
V
CE
(sat)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Test Condition
I
C
=500碌A(chǔ), I
E
=0
I
C
=5mA, I
B
=0
I
E
=500碌A(chǔ), I
C
=0
V
EB
=9V, I
C
=0
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=1.0A
I
C
=0.5A, I
B
=0.1A
I
C
=1.0A, I
B
=0.25A
I
C
=1.5A, I
B
=0.5A
V
BE
(sat)
f
T
t
ON
t
STG
t
F
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
I
C
=0.5A, I
B
=0.1A
I
C
=1.0A, I
B
=0.25A
V
CE
=10V, I
C
=0.1A
V
CC
=125V, I
C
=1A,
I
B1
=0.2A, I
B2
=-0.2A,
R
L
= 125鈩?/div>
4
1.1
4.0
0.7
9
5
0.5
1.0
3.0
1.0
1.2
V
V
V
V
V
MHz
碌s
碌s
碌s
Min.
700
400
9
10
21
Typ.
Max.
Units
V
V
V
碌A(chǔ)
漏2001 Fairchild Semiconductor Corporation
Rev. A, July 2001
1
2
3
4
5
